IS6806A Is an integrated power-level solution optimized for low-duty cycle synchronous step-down applications. It provides high current, high efficiency and excellent thermal performance with high power density. IS6806A The 5 mm x 6 mm MLP package enables the VR design to reach 75 A of current per phase. Internal power MOSFET minimizes the switching and conduction loss.

IS6806A Internal MOSFET gate with high current drive capability, adaptive dead zone time control and integrated bootstrapping switch, thermal monitor, can alert the system when the temperature is too high. The drive is also compatible with various PWM controllers and supports 3.3 V and 5 V PWM. The diode simulation mode can be enabled under light load by using the GLCTRL signal. The device also incorporates a current monitor to provide a real-time current monitoring function (Imon) (the output inductive current is scaled down). This device also integrates fault alarms, such as HS FET overcurrent, overmild HS MOSFET short circuit failure.

Product Parameter

Input voltage: 4.5V- -16V

Output voltage: 0.8V-5V

Output current: 75A

Frequency: unlimited-2 MHz

Efficiency: 90%

● Schottky diode integration in LS MOSFET to optimize the MOSFET switch performance

●Output current capacity of  75 A

●High-frequency operation at  2 MHz

● A 3.3-V PWM logic with three-states and latency

● 30 ns minimum PWM controllable conduction time

● Diode simulation mode under light load to achieve high efficiency in the full load range

● Low PWM transmission latency (<20 ns)

● Current Detection Monitor (IMON)

● Temperature Monitor (TMON)

● Over-temperature alarm (OTP)

● HS MOSFET Overcurrent and short circuit alarms

● VDRV and VCC undervoltage lock

● Heat resistant MLP 56-39L package